Communication

Stretchable Semiconductor Technologies with High Areal Coverages and Strain-Limiting Behavior: Demonstration in High-Efficiency Dual-Junction GaInP/GaAs Photovoltaics

  1. Jongho Lee1,
  2. Jian Wu2,
  3. Jae Ha Ryu3,
  4. Zhuangjian Liu4,
  5. Matthew Meitl5,
  6. Yong-Wei Zhang4,
  7. Yonggang Huang6,
  8. John A. Rogers7,*

Article first published online: 29 MAR 2012

DOI: 10.1002/smll.201102437

Issue

Small

Small

Volume 8, Issue 12, pages 1851–1856, June 25, 2012

Additional Information

How to Cite

Lee, J., Wu, J., Ryu, J. H., Liu, Z., Meitl, M., Zhang, Y.-W., Huang, Y. and Rogers, J. A. (2012), Stretchable Semiconductor Technologies with High Areal Coverages and Strain-Limiting Behavior: Demonstration in High-Efficiency Dual-Junction GaInP/GaAs Photovoltaics. Small, 8: 1851–1856. doi: 10.1002/smll.201102437

Author Information

  1. 1

    Department of Mechatronics, Gwangju Institute of Science and Technology (GIST), 123 Cheomdan-gwagiro, Buk-gu, Gwangju, 500-712, Korea

  2. 2

    Department of Engineering Mechanics, Tsinghua University, Beijing, 100084, China

  3. 3

    Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign Urbana, IL 61801, USA

  4. 4

    Institute of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, 138632, Singapore

  5. 5

    Semprius, 4915 Prospectus Dr., Durham, NC 27713, USA

  6. 6

    Department of Mechanical Engineering, Civil and Environmental Engineering, Northwestern University, Evanston, IL 60208, USA

  7. 7

    Department of Materials Science and Engineering, Department of Chemistry, Department of Mechanical Science and Engineering, Department of Electrical and Computer Engineering, Frederick Seitz Materials Research Laboratory, Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign Urbana, IL 61801, USA

*Department of Materials Science and Engineering, Department of Chemistry, Department of Mechanical Science and Engineering, Department of Electrical and Computer Engineering, Frederick Seitz Materials Research Laboratory, Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign Urbana, IL 61801, USA.

Publication History

  1. Issue published online: 18 JUN 2012
  2. Article first published online: 29 MAR 2012
  3. Manuscript Revised: 13 JAN 2012
  4. Manuscript Received: 21 NOV 2011

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Keywords:

  • photovoltaics;
  • stretchable materials;
  • solar cells;
  • GaAs;
  • GaInP
Thumbnail image of graphical abstract

Notched islands on a thin elastomeric substrate serve as a platform for dual-junction GaInP/GaAs solar cells with microscale dimensions and ultrathin forms for stretchable photovoltaic modules. These designs allow for a high degree of stretchability and areal coverage, and they provide a natural form of strain-limiting behavior, helping to avoid destructive effects of extreme deformations.

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