Investigating the Mechanism of Hysteresis Effect in Graphene Electrical Field Device Fabricated on SiO2 Substrates using Raman Spectroscopy
Version of Record online: 8 JUN 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 8, Issue 18, pages 2833–2840, September 24, 2012
How to Cite
Xu, H., Chen, Y., Zhang, J. and Zhang, H. (2012), Investigating the Mechanism of Hysteresis Effect in Graphene Electrical Field Device Fabricated on SiO2 Substrates using Raman Spectroscopy. Small, 8: 2833–2840. doi: 10.1002/smll.201102468
- Issue online: 17 SEP 2012
- Version of Record online: 8 JUN 2012
- Manuscript Revised: 20 MAR 2012
- Manuscript Received: 24 NOV 2011
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