1613-6829/asset/olbannerleft.gif?v=1&s=abb62bf4c508cccceaedd2e443743ab301acf753)
1613-6829/asset/olbannerright.gif?v=1&s=a0928f6da005e96a3ecfdb9f725fca70c1592474)
Communication
High-Performance Inkjet Printed Carbon Nanotube Thin Film Transistors with High-k HfO2 Dielectric on Plastic Substrate
Article first published online: 5 JUL 2012
DOI: 10.1002/smll.201200041
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Lee, C. W., Raman Pillai, S. K., Luan, X., Wang, Y., Li, C. M. and Chan-Park, M. B. (2012), High-Performance Inkjet Printed Carbon Nanotube Thin Film Transistors with High-k HfO2 Dielectric on Plastic Substrate. Small, 8: 2941–2947. doi: 10.1002/smll.201200041
Publication History
- Issue published online: 2 OCT 2012
- Article first published online: 5 JUL 2012
- Manuscript Revised: 20 MAR 2012
- Manuscript Received: 8 JAN 2012
Keywords:
- inkjet printing;
- carbon nanotubes;
- flexible electronics;
- thin film transistors
Inkjet printing is used to fabricate CN-TFT devices on PET substrate with 70 nm HfO2 gate dielectric. By varying the amount of printing, effective mobility can be raised to 43 cm2 V−1 s−1 with on/off ratio ≥ 104 for devices with channel length 160 μm. This demonstrates that inkjet printing is promising for fabrication of high-performance devices in flexible electronics.