MoS2 Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel
Version of Record online: 31 JUL 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 8, Issue 20, pages 3111–3115, October 22, 2012
How to Cite
Lee, H. S., Min, S.-W., Park, M. K., Lee, Y. T., Jeon, P. J., Kim, J. H., Ryu, S. and Im, S. (2012), MoS2 Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel. Small, 8: 3111–3115. doi: 10.1002/smll.201200752
- Issue online: 15 OCT 2012
- Version of Record online: 31 JUL 2012
- Manuscript Revised: 22 MAY 2012
- Manuscript Received: 6 APR 2012
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