Silicon Nanowire Charge-Trap Memory Incorporating Self-Assembled Iron Oxide Quantum Dots
Article first published online: 10 SEP 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 8, Issue 22, pages 3417–3421, November 19, 2012
How to Cite
Huang, R.-G. and Heath, J. R. (2012), Silicon Nanowire Charge-Trap Memory Incorporating Self-Assembled Iron Oxide Quantum Dots. Small, 8: 3417–3421. doi: 10.1002/smll.201200940
- Issue published online: 14 NOV 2012
- Article first published online: 10 SEP 2012
- Manuscript Received: 1 MAY 2012
Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors.
Please note: Wiley Blackwell is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.