Top-Down Fabricated Silicon-Nanowire-Based Field-Effect Transistor Device on a (111) Silicon Wafer
Article first published online: 12 NOV 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 9, Issue 4, pages 525–530, February 25, 2013
How to Cite
Yu, X., Wang, Y., Zhou, H., Liu, Y., Wang, Y., Li, T. and Wang, Y. (2013), Top-Down Fabricated Silicon-Nanowire-Based Field-Effect Transistor Device on a (111) Silicon Wafer. Small, 9: 525–530. doi: 10.1002/smll.201201599
- Issue published online: 15 FEB 2013
- Article first published online: 12 NOV 2012
- Manuscript Revised: 15 AUG 2012
- Manuscript Received: 9 JUL 2012
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