Facile and Clean Release of Vertical Si Nanowires by Wet Chemical Etching Based on Alkali Hydroxides
Version of Record online: 23 NOV 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 9, Issue 6, pages 905–912, March 25, 2013
How to Cite
Yoon, S.-S. and Khang, D.-Y. (2013), Facile and Clean Release of Vertical Si Nanowires by Wet Chemical Etching Based on Alkali Hydroxides. Small, 9: 905–912. doi: 10.1002/smll.201201804
- Issue online: 15 MAR 2013
- Version of Record online: 23 NOV 2012
- Manuscript Revised: 28 SEP 2012
- Manuscript Received: 26 JUL 2012
As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors.
Please note: Wiley Blackwell is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.