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Transparent Nanowire Network Electrode for Textured Semiconductors

Authors

  • Jinwei Gao,

    Corresponding author
    1. Institute for Advanced Materials (IAM), South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
    • Institute for Advanced Materials (IAM), South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
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  • Ke Pei,

    1. Institute for Advanced Materials (IAM), South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
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  • Tianyi Sun,

    1. Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA
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  • Yaohui Wang,

    1. Institute for Advanced Materials (IAM), South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
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  • Linghai Zhang,

    1. Institute for Advanced Materials (IAM), South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
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  • Weijin Peng,

    1. Institute for Advanced Materials (IAM), South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
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  • Qinggeng Lin,

    1. Institute for Advanced Materials (IAM), South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
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  • Michael Giersig,

    1. Institute of Experimental Physics, Freie University of Berlin, Berlin 14195, Germany
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  • Krzysztof Kempa,

    1. Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA
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  • Zhifeng Ren,

    1. Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA
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  • Yang Wang

    Corresponding author
    1. Institute for Advanced Materials (IAM), South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
    • Institute for Advanced Materials (IAM), South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
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Abstract

This work presents an inexpensive and easily manufacturable, highly conductive and transparent nanowire network electrode for textured semiconductors. It is based on lines of silver nanoparticles transformed into a nanowire network by microwave or furnace sintering. The nanonetwork electrode on crystalline silicon is demonstrated experimentally, with the nanoparticles self-assembling in the valleys between the pyramids of the textured surface. Optical experiments show that this conductive nanowire network electrode can be essentially ‘invisible’ when covered with the conventional anti-reflection coating (ARC), and thus could be employed in photovoltaic applications.

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