Memory Devices Using a Mixture of MoS2 and Graphene Oxide as the Active Layer
Article first published online: 19 NOV 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 9, Issue 5, pages 727–731, March 11, 2013
How to Cite
Yin, Z., Zeng, Z., Liu, J., He, Q., Chen, P. and Zhang, H. (2013), Memory Devices Using a Mixture of MoS2 and Graphene Oxide as the Active Layer. Small, 9: 727–731. doi: 10.1002/smll.201201940
- Issue published online: 4 MAR 2013
- Article first published online: 19 NOV 2012
- Manuscript Received: 9 AUG 2012
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