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Geometry-Induced Dislocations in Coaxial Heterostructural Nanotubes

Authors

  • Aram Yoon,

    1. Department of Materials Science & Engineering and Research Institute of Advanced Materials, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 151-744, Korea
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  • Jun Young Park,

    1. Department of Materials Science & Engineering and Research Institute of Advanced Materials, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 151-744, Korea
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  • Jong-Myeong Jeon,

    1. Department of Materials Science & Engineering and Research Institute of Advanced Materials, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 151-744, Korea
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  • Yigil Cho,

    1. Department of Materials Science & Engineering and Research Institute of Advanced Materials, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 151-744, Korea
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  • Jun Beom Park,

    1. Department of Physics, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 151-744, Korea
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  • Gyu-Chul Yi,

    1. Department of Physics, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 151-744, Korea
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  • Kyu Hwan Oh,

    1. Department of Materials Science & Engineering and Research Institute of Advanced Materials, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 151-744, Korea
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  • Heung Nam Han,

    Corresponding author
    1. Department of Materials Science & Engineering and Research Institute of Advanced Materials, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 151-744, Korea
    • Department of Materials Science & Engineering and Research Institute of Advanced Materials, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 151-744, Korea.

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  • Miyoung Kim

    Corresponding author
    1. Department of Materials Science & Engineering and Research Institute of Advanced Materials, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 151-744, Korea
    • Department of Materials Science & Engineering and Research Institute of Advanced Materials, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 151-744, Korea.

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Abstract

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Highly localized dislocations in GaN/ZnO hetero-nanostructures are generated from the residual strain field by lattice mismatches at two interfaces: between the substrate and hetero-nanostructures, and between the ZnO core and GaN shell. The local strain field is measured using tranmission electron microscopy, and the relationship between the nanostructure morphology and the highly localized dislocations is analyzed by a finite element method.

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