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Nonvolatile Analog Memory Transistor Based on Carbon Nanotubes and C60 Molecules

Authors

  • Byungjin Cho,

    1. Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, California 90095, USA
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  • Kyunghyun Kim,

    1. Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, California 90095, USA
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  • Chia-Ling Chen,

    1. Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, California 90095, USA
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  • Alex Ming Shen,

    1. Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, California 90095, USA
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  • Quyen Truong,

    1. Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, California 90095, USA
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  • Yong Chen

    Corresponding author
    1. Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, California 90095, USA
    2. California NanoSystems Institute, University of California, Los Angeles,California 90095, USA
    • Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, California 90095, USA.

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Abstract

A nonvolatile analog memory transistor is demonstrated by integrating C60 molecules as charge storage molecules in the transistor gate, and carbon nanotubes (CNTs) in the transistor channel. The currents through the CNT channel can be tuned quantitatively and reversibly to analog values by controlling the number of electrons trapped in the C60 molecules. After tuning, the electrons trapped in the C60 molecules in the gate, and the current through the CNT channel, can be preserved in a nonvolatile manner, indicating the characteristics of the nonvolatile analog memory.

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