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Keywords:

  • boron nitride;
  • interfaces;
  • nanocrystalline materials;
  • self-limiting growth;
  • thin films
Thumbnail image of graphical abstract

A self-limiting growth process based on the interface-controlled reaction of molten boron oxide (B2O3) with ammonia (NH3) is demonstrated for the facile and lost-cost synthesis of ultrathin (20–30 nm) crystalline hexagonal boron nitride (h-BN) films over large areas. The as-grown h-BN films are of high quality, being densely continuous, uniform and smooth, and highly transparent over a broad wavelength range.