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Facile Synthesis of Large-Area Ultrathin Hexagonal BN Films via Self-Limiting Growth at the Molten B2O3 Surface

Authors

  • Xiaoxia Yang,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, PR China
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  • Zixuan Guan,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, PR China
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  • Min Zeng,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, PR China
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  • Jiake Wei,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, PR China
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  • Wenlong Wang,

    Corresponding author
    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, PR China
    • Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, PR China.
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  • Xuedong Bai

    Corresponding author
    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, PR China
    • Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, PR China.
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Abstract

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A self-limiting growth process based on the interface-controlled reaction of molten boron oxide (B2O3) with ammonia (NH3) is demonstrated for the facile and lost-cost synthesis of ultrathin (20–30 nm) crystalline hexagonal boron nitride (h-BN) films over large areas. The as-grown h-BN films are of high quality, being densely continuous, uniform and smooth, and highly transparent over a broad wavelength range.

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