Carbon Nanotube Photoelectronic and Photovoltaic Devices and their Applications in Infrared Detection

Authors

  • Leijing Yang,

    1. Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
    Search for more papers by this author
  • Sheng Wang,

    Corresponding author
    1. Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China
    • Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China
    Search for more papers by this author
  • Qingsheng Zeng,

    1. Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China
    Search for more papers by this author
  • Zhiyong Zhang,

    1. Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China
    Search for more papers by this author
  • Lian-Mao Peng

    Corresponding author
    1. Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
    • Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China.
    Search for more papers by this author

Abstract

Semiconducting carbon nanotubes (CNTs) are direct bandgap materials with outstanding electronic and optoelectronic properties and have been investigated for various electronic and optoelectronic device applications, such as light-emitting diodes, photodetectors and photovoltaic cells. Here, a brief review of the various types of CNT diodes is presented, with a focus on one particular type of CNT diodes fabricated via a doping-free process. Their application for constructing high-performance optoelectronic and photovoltaic devices is also discussed, as well as the newly discovered photovoltage multiplication effect in CNTs and its application in improving the efficiency of CNT-based infrared detector.

Ancillary