Monolayer Graphene Film on ZnO Nanorod Array for High-Performance Schottky Junction Ultraviolet Photodetectors

Authors

  • Biao Nie,

    1. School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional, Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, PR China
    Search for more papers by this author
  • Ji-Gang Hu,

    1. School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional, Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, PR China
    Search for more papers by this author
  • Lin-Bao Luo,

    Corresponding author
    1. School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional, Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, PR China
    • School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional, Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, PR China
    Search for more papers by this author
  • Chao Xie,

    1. School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional, Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, PR China
    Search for more papers by this author
  • Long-Hui Zeng,

    1. School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional, Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, PR China
    Search for more papers by this author
  • Peng Lv,

    1. School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional, Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, PR China
    Search for more papers by this author
  • Fang-Ze Li,

    1. School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional, Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, PR China
    Search for more papers by this author
  • Jian-Sheng Jie,

    1. Institute of Functional Nano & Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional, Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, PR China
    Search for more papers by this author
  • Mei Feng,

    1. Division of Nanomaterials and Chemistry, Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, PR China, Fax: +86 551 63603040
    Search for more papers by this author
  • Chun-Yan Wu,

    1. School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional, Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, PR China
    Search for more papers by this author
  • Yong-Qiang Yu,

    1. School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional, Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, PR China
    Search for more papers by this author
  • Shu-Hong Yu

    Corresponding author
    1. Division of Nanomaterials and Chemistry, Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, PR China, Fax: +86 551 63603040
    • Division of Nanomaterials and Chemistry, Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, PR China, Fax: +86 551 63603040.
    Search for more papers by this author

Abstract

A new Schottky junction ultraviolet photodetector (UVPD) is fabricated by coating a free-standing ZnO nanorod (ZnONR) array with a layer of transparent monolayer graphene (MLG) film. The single-crystalline [0001]-oriented ZnONR array has a length of about 8–11 μm, and a diameter of 100∼600 nm. Finite element method (FEM) simulation results show that this novel nanostructure array/MLG heterojunction can trap UV photons effectively within the ZnONRs. By studying the I–V characteristics in the temperature range of 80–300 K, the barrier heights of the MLG film/ZnONR array Schottky barrier are estimated at different temperatures. Interestingly, the heterojunction diode with typical rectifying characteristics exhibits a high sensitivity to UV light illumination and a quick response of millisecond rise time/fall times with excellent reproducibility, whereas it is weakly sensitive to visible light irradiation. It is also observed that this UV photodetector (PD) is capable of monitoring a fast switching light with a frequency as high as 2250 Hz. The generality of the above results suggest that this MLG film/ZnONR array Schottky junction UVPD will have potential application in future optoelectronic devices.

Ancillary