The cover image illustrates the fabricated MoS2 film field-effect transistor (FET) used for sensing nitric oxide (NO). By using the scotch-tape-based mechanical exfoliation technique, single- and multilayer MoS2 films are prepared and deposited onto Si/SiO2 substrates, which are then used for fabrication of FETs, exhibiting n-type semiconducting properties. These FETs are used as gas sensors to detect NO. The double-layer MoS2 FET device gives a detection limit of 0.8 ppm, suggesting potential applications for these 2D MoS2 FETs. For more information, please read the Communication “Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature” by H. Zhang and co-workers, beginning on page 63.