Get access

Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes

Authors

  • Jongwon Yoon,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, Korea
    Search for more papers by this author
  • Woojin Park,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, Korea
    Search for more papers by this author
  • Ga-Yeong Bae,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, Korea
    Search for more papers by this author
  • Yonghun Kim,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, Korea
    Search for more papers by this author
  • Hun Soo Jang,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, Korea
    Search for more papers by this author
  • Yujun Hyun,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, Korea
    Search for more papers by this author
  • Sung Kwan Lim,

    1. Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea
    Search for more papers by this author
  • Yung Ho Kahng,

    1. Research Institute for Solar and Sustainable Energies, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
    Search for more papers by this author
  • Woong-Ki Hong,

    Corresponding author
    1. Jeonju center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 561-180, Korea
    • Jeonju center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 561-180, Korea.
    Search for more papers by this author
  • Byoung Hun Lee,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, Korea
    2. Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea
    Search for more papers by this author
  • Heung Cho Ko

    Corresponding author
    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, Korea
    • School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, Korea
    Search for more papers by this author

Abstract

A highly flexible and transparent transistor is developed based on an exfoliated MoS2 channel and CVD-grown graphene source/drain electrodes. Introducing the 2D nanomaterials provides a high mechanical flexibility, optical transmittance (∼74%), and current on/off ratio (>104) with an average field effect mobility of ∼4.7 cm2 V−1 s−1, all of which cannot be achieved by other transistors consisting of a MoS2 active channel/metal electrodes or graphene channel/graphene electrodes. In particular, a low Schottky barrier (∼22 meV) forms at the MoS2/graphene interface, which is comparable to the MoS2/metal interface. The high stability in electronic performance of the devices upon bending up to ±2.2 mm in compressive and tensile modes, and the ability to recover electrical properties after degradation upon annealing, reveal the efficacy of using 2D materials for creating highly flexible and transparent devices.

Ancillary