A Strategy to Prepare Wafer Scale Bismuth Compound Superstructures

Authors

  • Chuan Fei Guo,

    1. National Center for Nanoscience and Technology, China, No. 11 Beiyitiao Zhongguancun, Beijing 100190, China
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  • Jianming Zhang,

    1. National Center for Nanoscience and Technology, China, No. 11 Beiyitiao Zhongguancun, Beijing 100190, China
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  • Meng Wang,

    1. National Center for Nanoscience and Technology, China, No. 11 Beiyitiao Zhongguancun, Beijing 100190, China
    2. TEDA Applied Physics School, Nankai University, Tianjin 300457, China
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  • Ye Tian,

    1. National Center for Nanoscience and Technology, China, No. 11 Beiyitiao Zhongguancun, Beijing 100190, China
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  • Qian Liu

    Corresponding author
    1. National Center for Nanoscience and Technology, China, No. 11 Beiyitiao Zhongguancun, Beijing 100190, China
    2. TEDA Applied Physics School, Nankai University, Tianjin 300457, China
    • National Center for Nanoscience and Technology, China, No. 11 Beiyitiao Zhongguancun, Beijing 100190, China.
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Abstract

original image

Epitaxial wafer scale superstructures of bismuth compounds are synthesized. Single crystalline β-Bi2O3 films are obtained by sputtering amorphous BiOx onto (001)-oriented strontium titanate with a buffer layer, followed by thermal crystallization. This is used as the precursor for the growth of the superstructures. The superstructures of bismuth compounds reveal anisotropic physical properties that are related to their unique morphology.

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