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Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes

Authors

  • Xuyong Yang,

    1. Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, Singapore
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  • Evren Mutlugun,

    1. Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, Singapore
    2. Department of Electrical and Electronics Engineering, Department of Physics, UNAM – Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, Ankara, Turkey
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  • Yongbiao Zhao,

    1. Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, Singapore
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  • Yuan Gao,

    1. School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
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  • Kheng Swee Leck,

    1. Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, Singapore
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  • Yanyan Ma,

    1. State Key Lab of Luminescence Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangdong, China
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  • Lin Ke,

    1. Institute of Materials Research and Engineering, A* STAR (Agency for Science, Technology and Research), Singapore, Singapore
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  • Swee Tiam Tan,

    1. Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, Singapore
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  • Hilmi Volkan Demir,

    Corresponding author
    1. Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, Singapore
    2. Department of Electrical and Electronics Engineering, Department of Physics, UNAM – Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, Ankara, Turkey
    3. School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
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  • Xiao Wei Sun

    Corresponding author
    1. Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, Singapore
    2. South University of Science and Technology, Shenzhen, Guangdong, China
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Abstract

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A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are promising solution-processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next-generation lighting and displays.

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