S.-H. Su and Y.-T.Hsu contributed equally.
Band Gap-Tunable Molybdenum Sulfide Selenide Monolayer Alloy
Article first published online: 7 MAR 2014
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 10, Issue 13, pages 2589–2594, July 9, 2014
How to Cite
Su, S.-H., Hsu, Y.-T., Chang, Y.-H., Chiu, M.-H., Hsu, C.-L., Hsu, W.-T., Chang, W.-H., He, J.-H. and Li, L.-J. (2014), Band Gap-Tunable Molybdenum Sulfide Selenide Monolayer Alloy. Small, 10: 2589–2594. doi: 10.1002/smll.201302893
- Issue published online: 2 JUL 2014
- Article first published online: 7 MAR 2014
- Manuscript Received: 6 SEP 2013
- transition metal dichalcogenides;
- band gap tuning;
- layered materials;
- two-dimensional materials
The optical energy gap of as-grown MoS2 flakes from chemical vapor deposition can be modulated from 1.86 eV (667 nm) to 1.57 eV (790 nm) by a vapor phase selenization process. This approach, replacing one chalcogen by another in the gas phase, is promising in modulating the optical and electronic properties of other transition metal dichalcogenide monolayers.