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Keywords:

  • transition metal dichalcogenides;
  • MoS2;
  • band gap tuning;
  • layered materials;
  • two-dimensional materials
Thumbnail image of graphical abstract

The optical energy gap of as-grown MoS2 flakes from chemical vapor deposition can be modulated from 1.86 eV (667 nm) to 1.57 eV (790 nm) by a vapor phase selenization process. This approach, replacing one chalcogen by another in the gas phase, is promising in modulating the optical and electronic properties of other transition metal dichalcogenide monolayers.