Direct-Write Complementary Graphene Field Effect Transistors and Junctions via Near-Field Electrospinning

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Abstract

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A novel process to create self-aligned and chemically doped graphene channel is presented. Near-field electrospinning is utilized to pattern and chemically dope the graphene layer using functionalized polymers such as PEI and PEO. Field effects of p- and n-type graphene channel transistors are fabricated and complimentary inverter circuitry using electronic junctions is successfully demonstrated.

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