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Keywords:

  • graphene;
  • near-field electrospinning;
  • graphene doping;
  • field effect transistor;
  • electrical junction
Thumbnail image of graphical abstract

A novel process to create self-aligned and chemically doped graphene channel is presented. Near-field electrospinning is utilized to pattern and chemically dope the graphene layer using functionalized polymers such as PEI and PEO. Field effects of p- and n-type graphene channel transistors are fabricated and complimentary inverter circuitry using electronic junctions is successfully demonstrated.