Room Temperature Magnetic Graphene Oxide- Iron Oxide Nanocomposite Based Magnetoresistive Random Access Memory Devices via Spin-Dependent Trapping of Electrons
Article first published online: 28 FEB 2014
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 10, Issue 10, pages 1945–1952, May 28, 2014
How to Cite
Lin, A. L., Peng, H., Liu, Z., Wu, T., Su, C., Loh, K. P., Ariando, Chen, W. and Wee, A. T.S. (2014), Room Temperature Magnetic Graphene Oxide- Iron Oxide Nanocomposite Based Magnetoresistive Random Access Memory Devices via Spin-Dependent Trapping of Electrons. Small, 10: 1945–1952. doi: 10.1002/smll.201302986
- Issue published online: 20 MAY 2014
- Article first published online: 28 FEB 2014
- Manuscript Revised: 8 JAN 2014
- Manuscript Received: 14 SEP 2013
- MOE ARF. Grant Number: R-398–000–056–112
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