Supramolecular Chemistry on Graphene Field-Effect Transistors

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Abstract

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The electronic properties of large-area graphene transistors (1 mm × 1 mm) prepared from commercially available graphene on silicon/silicon dioxide modified by self-assembled bis-urea-terthiophene (T3) and bis-urea-nonane (C9) molecular wires are reported. Gate spectroscopy on molecularly modified graphene transistors show that the electronic interaction between the molecular wires and the graphene is weak compared to the effect of unwanted dopants.

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