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Epitaxial Growth of Asymmetrically-Doped Bilayer Graphene for Photocurrent Generation

Authors

  • Yu Zhou,

    1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, People's Republic of China
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    • These authors contributed equally to this work

  • Kai Yan,

    1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, People's Republic of China
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    • These authors contributed equally to this work

  • Di Wu,

    1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, People's Republic of China
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  • Shuli Zhao,

    1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, People's Republic of China
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  • Li Lin,

    1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, People's Republic of China
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  • Li Jin,

    1. State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
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  • Lei Liao,

    1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, People's Republic of China
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  • Huan Wang,

    1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, People's Republic of China
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  • Qiang Fu,

    1. State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
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  • Xinhe Bao,

    1. State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
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  • Hailin Peng,

    Corresponding author
    1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, People's Republic of China
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  • Zhongfan Liu

    Corresponding author
    1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, People's Republic of China
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Abstract

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An asymmetrically doped bilayer graphene is grown by modulation-doped chemical vapor deposition, which consists of one intrinsic layer and one nitrogen-doped layer according to AB stacking. The asymmetrically doped bilayer crystalline profile is found to extend the identical registry as adjacent pristine bilayer region, thus forming single-crystalline bilayer graphene p–n junctions. Efficient photocurrent with responsivity as high as 0.2 mA/W is generated at the bilayer p–n junctions via a hot carrier-assisted mechanism.

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