Field-Effect Transistors: Unique Role of Self-Assembled Monolayers in Carbon Nanomaterial-Based Field-Effect Transistors (Small 8/2013)

Authors

  • Hongliang Chen,

    1. Center for NanoChemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural, Chemistry of Unstable and Stable Species College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR China
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  • Xuefeng Guo

    Corresponding author
    1. Center for NanoChemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural, Chemistry of Unstable and Stable Species College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR China
    2. Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, PR China
    • Center for NanoChemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural, Chemistry of Unstable and Stable Species College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR China.
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Abstract

original image

Integrated electrical circuits are described by H. Chen and X. Guo through the combination of bottom-up self-assembly and top-down device fabrication. In each device on page 1144, self-assembled monolayers are used as active layers and carbon nanomaterials (such as single-walled carbon nanotubes or graphene) act as nanoelectrodes, forming stimuli-responsive high-performance organic field-effect transistors. In conjunction with their miniaturized dimensions, the ability to integrate these hybrid devices into current CMOS technology has the potential to create multifunctional integrated circuits as a significant step towards practical molecular devices.

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