Graphene Growth: Mechanisms of Graphene Growth on Metal Surfaces: Theoretical Perspectives (Small 11/2014)

Authors

  • Ping Wu,

    1. Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, China
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  • Wenhua Zhang,

    1. Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, China
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  • Zhenyu Li,

    Corresponding author
    1. Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, China
    • Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics===, University of Science and Technology of China===, Hefei=== Anhui=== 230026=== China=== ===

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  • Jinglong Yang

    Corresponding author
    1. Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, China
    • Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics===, University of Science and Technology of China===, Hefei=== Anhui=== 230026=== China=== ===

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Abstract

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Large-scale synthesis is very critical to promote research and applications of graphene. High quality samples can now be grown on various metal surfaces. In additional to experimental efforts to understand the underlying growth mechanisms, more and more atomic details about graphene growth are being revealed by multiscale theoretical/computational studies, which are expected to eventually make rational design of growth protocol possible. A Review of these developements is provided by Z. Li, J. Yang, and co-workers on page 2136.

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