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Keywords:

  • multi-gate MOSFET;
  • vertical ultrathin channel;
  • channel formation;
  • impurity doping;
  • postfabrication Vth control

Abstract

One of the biggest challenges for the VLSI circuits with 32-nm-technology nodes and beyond is to prevent catastrophic increases in power consumption due to short-channel effects. Vertical ultrathin-channel (UTC) multi-gate MOSFETs (MuGFETs) have a promising potential to overcome this issue thanks to their superior SCE immunity due to extremely high electrostatic control of the channel. Before we put vertical UTC MuGFETs to practical use, however, we have to solve several technological problems due to the vertical configuration of the channel. This paper discusses the advantages and challenges of vertical UTC MuGFETs and speculates about their future development. Copyright © 2009 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.