Examination of Maskless Etching Technique Using a Localized Surface Discharge Plasma

Authors

  • Toshiyuki Hamada,

    Student Member, Corresponding author
    1. Department of Materials and Infomatics, Interdisciplinary Graduate School of Agriculture and Engineering, University of Miyazaki, 1-1, Gakuenkibanadai-Nishi, Miyazaki 889-2192, Japan
    • Department of Materials and Infomatics, Interdisciplinary Graduate School of Agriculture and Engineering, University of Miyazaki, 1-1, Gakuenkibanadai-Nishi, Miyazaki 889-2192, Japan
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  • Tatsuya Sakoda,

    Member
    1. Department of Electrical and Electronic Engineering, Faculty of Engineering, University of Miyazaki, 1-1, Gakuenkibanadai-Nishi, Miyazaki 889-2192, Japan
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  • Masahisa Otsubo

    Member
    1. Department of Electrical and Electronic Engineering, Faculty of Engineering, University of Miyazaki, 1-1, Gakuenkibanadai-Nishi, Miyazaki 889-2192, Japan
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Abstract

A maskless etching technique which is useful for solar cell manufacturing and microelectronics was examined using the localized surface discharge plasma at atmospheric pressure. Etchings were carried out on a crystalline silicon (Si) substrate and a silicon nitride (SiN) film coated on a Si substrate. Two- and three-dimensional etching profiles were investigated. Based on the results, etching rates and an etching mechanism were discussed. Copyright © 2010 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

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