Special Issue Paper / Special Issue on State-of-the-Art MEMS Technologies
Growth of GaN LED Structure on Si Substrate by MBE and Monolithic Fabrication of GaN LED Cooling System
Article first published online: 16 FEB 2010
Copyright © 2010 Institute of Electrical Engineers of Japan
IEEJ Transactions on Electrical and Electronic Engineering
Special Issue: Special Issue on State-of-the-Art MEMS Technologies / Special Issue on Electronics, Information and Systems
Volume 5, Issue 2, pages 171–174, March 2010
How to Cite
Wakui, M., Hu, F.-R., Sameshima, H. and Hane, K. (2010), Growth of GaN LED Structure on Si Substrate by MBE and Monolithic Fabrication of GaN LED Cooling System. IEEJ Trans Elec Electron Eng, 5: 171–174. doi: 10.1002/tee.20513
- Issue published online: 16 FEB 2010
- Article first published online: 16 FEB 2010
- Manuscript Revised: 7 NOV 2009
- Manuscript Received: 1 JUL 2009
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