Mechanical characterizations of topology-insensitive rivet bonding using the sidewall bond principle

Authors

  • S. Kang,

    Non-member, Corresponding author
    1. ISRC, School of Electrical Engineering and Computer Sciences, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
    • ISRC, School of Electrical Engineering and Computer Sciences, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
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  • E. Lee,

    Non-member
    1. Micro Systems Laboratory, Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-dong, Giheung-gu, Yongin-si Gyeonggi-do 446-712, Korea
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  • H. C. Kim,

    Non-member
    1. School of Electrical Engineering, University of Ulsan, Mugeo 2-dong, Nam-gu, Ulsan 680-749, Korea
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  • K. Chun

    Non-member
    1. ISRC, School of Electrical Engineering and Computer Sciences, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
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Abstract

Our goal was to develop a topology-insensitive rivet bonding method using the sidewall bond principle for MEMS devices and evaluate its mechanical characteristics. The proposed bonding method is comprised of two fundamental structures with a sidewall bond between them. The first is a male wafer having a relatively thick solder as a donor, and the second is a female wafer as an acceptor with a structure similar to a through-via. The two wafers are bonded laterally by the reflow phenomena of the solder and the excess volume of the donor with the acceptor then generating a rivet. In this study, these structural features were investigated. The rivet bonding led to an enhancement in the bonding strength due to the plastic hardening behavior of the rivet, serving as a cushion for the stress. This was parametrically studied and experimentally verified. © 2011 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

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