Gaussian approximation of the emission from a semiconductor laser
Article first published online: 7 DEC 2012
Copyright 1982 by the American Geophysical Union.
Volume 17, Issue 1, pages 155–161, January-February 1982
How to Cite
1982), Gaussian approximation of the emission from a semiconductor laser, Radio Sci., 17(1), 155–161, doi:10.1029/RS017i001p00155., , and (
- Issue published online: 7 DEC 2012
- Article first published online: 7 DEC 2012
- Manuscript Accepted: 30 MAR 1981
- Manuscript Received: 29 NOV 1980
AGaussian approximation of the emission from a semiconductor laseris investigated by using the plane wave spectrum representation of the electric field. A Gaussian spectrum, which fits either the spectrum of the laser emission or its homogeneous component at the laser-air interface, is determined. The spread of a Gaussian function closely approximating the amplitude of the far field is obtained. The results show good agreement between the spread calculated for the Gaussian spectrum and that for the spectrum of the laser emission. The formulations and calculations are mainly carried out for a symmetric structure. The effect of the reflection at the laser-air interface and that of the asymmetry of the structure are also discussed.