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References

  • Ando, M., Katoh, Y., Tanigawa, H. & Kohyama, A. (1999) Microstructural examination of Ni-ion irradiated Fe-Ni-Cr alloys followed to micro-zone deformation. J. Nucl. Mater. 271, 111114.
  • Cerezo, A., Godfrey, T.J. & Smith, G.D.W. (1988) Application of a position-sensitive detector to atom probe microanalysis. Rev. Sci. Instrum. 59, 862866.
  • Cheng, Z., Sakamoto, T., Takahashi, M., Kuramoto, Y., Owari, M. & Nihei, Y. (1998) Development of ion and electron dual focused beam apparatus for high spatial resolution three-dimensional microanalysis of solid materials. J. Vac. Sci. Technol. B, 16, 24732478.DOI: 10.1116/1.590193
  • Griffin, A.J., Embury, J.D., Hundley, M.F., Jervis, T.R., Kung, H.H., Scarborough, W.K., Walter, K.C., Wood, J. & Nastasi, M. (1995) Residual stress, mechanical behaviour and electrical properties of Cu/Nb thin-film multilayers. Mater. Res. Soc. Symp. Proc. 382, 309314.
  • Hutter, H., Wilhartitz, P. & Grasserbauer, M. (1993) Topochemical characterization of materials using 3D-SIMS. Fres. J. Anal. Chem. 346, 6668.
  • Ishitani, T. & Tsuboi, H. (1997) Objective comparison of scanning ion and scanning electron microscope images. Scanning, 19, 489497.
  • Kirk, E.C.G., Cleaver, J.R.A. & Ahmed, H. (1987) In situ microsectioning and imaging of semiconductor devices using a scanning ion microscope. Inst. Phys. Conf. Ser. 87, 691696.
  • Kirk, E.C.G., Williams, D.A. & Ahmed, H. (1989) Cross-sectional transmission electron microscopy of precisely selected regions from semiconductor devices. Inst. Phys. Conf. Ser. 100, 501506.
  • Lehoczky, S.L. (1978) Strength enhancement in thin-layered Al-Cu laminates. J. Appl. Phys. 49, 54795485.
  • Levi-Setti, R., Fox, T.R. & Lam, K. (1983) Ion channeling effects in scanning ion microscopy with a 60 keV Ga+ probe. Nucl. Instrum. Methods, 205, 299309.
  • Misra, A., Verdier, M., Lu, Y.C., Kung, H., Mitchell, T.E., Nastasi, M. & Embury, J.D. (1998) Structure and mechanical properties of Cu-X (X=Nb, Cr, Ni) nanolayered composites. Scripta Mater. 39, 555560.DOI: 10.1016/s1359-6462(98)00196-1
  • Nikawa, K. (1991) Applications of focused ion beam technique to failure analysis of very large scale integrations: a review. J. Vac. Sci. Technol. B, 9, 25662577.
  • Patkin, A.J. & Morrison, G.H. (1982) Secondary ion mass spectrometric image depth profiling for three-dimensional elemental analysis. Anal. Chem. 54, 25.
  • Prewett, P.D. & Mair, G.L.R. (1991) Focused Ion Beams from Liquid Metal Ion Sources. Research Studies Press, Taunton, U.K.
  • Saka, H. & Abe, S. (1997) FIB/HVEM observation of the configuration of cracks and the defect structure near the cracks in Si. Jpn. J. Electron. Microsc. 1, 4557.
  • Sakamoto, T., Cheng, Z., Takahashi, M., Owari, M. & Nihei, Y. (1998) Development of an ion and electron dual focused ion beam apparatus for three-dimensional microanalysis. Jpn. J. Appl. Phys. 37, 20512056.
  • Satoh, H., Owari, M. & Nihei, Y. (1988) Quantitative analysis by submicron secondary ion mass spectrometry. J. Vac. Sci. Technol. B, 6, 915918.
  • Siegel, R.W. & Fougere, G.E. (1995) Mechanical properties of nanophase metals. Nanostruct. Mater. 6, 205216.
  • Tsui, T.Y., Vladdak, J. & Nix, W.D. (1999a) Indentation plastic displacement field: Part I. The case of soft films on hard substrates. J. Mater. Res. 14, 21962203.
  • Tsui, T.Y., Vladdak, J. & Nix, W.D. (1999b) Indentation plastic displacement field: Part II. The case of hard films on soft substrates. J. Mater. Res. 14, 22042209.
  • Ximen, H., DeFreez, R.K., Orloff, J., Elliott, R.A., Evans, G.A., Carlson, N.W., Lurie, M. & Bour, D.P. (1990) Focused ion beam micromachined three-dimensional features by means of a digital scan. J. Vac. Sci. Technol. B, 8, 13611365.