• structural anisotropy;
  • electrical anisotropy;
  • grazing-incidence X-ray diffraction

Organic field-effect transistors (OFETs) were fabricated by depositing a regioregular poly(3-hexylthiophene) (P3HT) active layer using a dip-coating method. The field-effect mobility in OFETs depends on chain orientation and crystallinity and is related to direction and withdrawal speed with respect to the source/drain orientation. In this paper, how to control the structural and transport properties of P3HT films by coating parallel and perpendicular to the dipping direction is demonstrated. X-ray diffraction curves taken in the perpendicular direction exhibit a higher degree of crystalline ordering and edge-on conformation compared with those in the parallel direction; this finding correlates with the directional anisotropy of the OFET mobility. Both structural anisotropy and transport properties are enhanced upon thermal treatment.