These authors contributed equally to this work.
A homozygous mutation of voltage-gated sodium channel βI gene SCN1B in a patient with Dravet syndrome
Article first published online: 13 NOV 2012
Wiley Periodicals, Inc. © 2012 International League Against Epilepsy
Volume 53, Issue 12, pages e200–e203, December 2012
How to Cite
Ogiwara, I., Nakayama, T., Yamagata, T., Ohtani, H., Mazaki, E., Tsuchiya, S., Inoue, Y. and Yamakawa, K. (2012), A homozygous mutation of voltage-gated sodium channel βI gene SCN1B in a patient with Dravet syndrome. Epilepsia, 53: e200–e203. doi: 10.1111/epi.12040
- Issue published online: 3 DEC 2012
- Article first published online: 13 NOV 2012
- Accepted September 27, 2012; Early View publication November 13, 2012.
- Dravet syndrome;
- SCN1B ;
- Voltage-gated sodium channel βI
Dravet syndrome is a severe form of epileptic encephalopathy characterized by early onset epileptic seizures followed by ataxia and cognitive decline. Approximately 80% of patients with Dravet syndrome have been associated with heterozygous mutations in SCN1A gene encoding voltage-gated sodium channel (VGSC) αI subunit, whereas a homozygous mutation (p.Arg125Cys) of SCN1B gene encoding VGSC βI subunit was recently described in a patient with Dravet syndrome. To further examine the involvement of homozygous SCN1B mutations in the etiology of Dravet syndrome, we performed mutational analyses on SCN1B in 286 patients with epileptic disorders, including 67 patients with Dravet syndrome who have been negative for SCN1A and SCN2A mutations. In the cohort, we found one additional homozygous mutation (p.Ile106Phe) in a patient with Dravet syndrome. The identified homozygous SCN1B mutations indicate that SCN1B is an etiologic candidate underlying Dravet syndrome.