Member, American Ceramic Society.
Electrical Properties of Individual Zinc Oxide Grain Boundaries Determined by Spatially Resolved Tunneling Spectroscopy
Article first published online: 8 MAR 2005
Journal of the American Ceramic Society
Volume 73, Issue 10, pages 3026–3032, October 1990
How to Cite
Rohrer, G. S. and Bonnell, D. A. (1990), Electrical Properties of Individual Zinc Oxide Grain Boundaries Determined by Spatially Resolved Tunneling Spectroscopy. Journal of the American Ceramic Society, 73: 3026–3032. doi: 10.1111/j.1151-2916.1990.tb06711.x
L. Levinson—contributing editor
Supported by the U.S. Department of Energy, Office of Basic Energy Science under Contract No. FE-FG02-90ER-45428.
Department of Metallurgical Engineering and Materials Science, Carnegie Mellon University, Pittsburgh, PA 15213.
- Issue published online: 8 MAR 2005
- Article first published online: 8 MAR 2005
- Manuscript No. 197667. Received April 6, 1990; approved June 15, 1990.
- grain boundaries;
- zinc oxide;
- scanning tunneling microscopy;
Scanning tunneling microscopy (STM) and spatially resolved tunneling spectroscopy (TS) were used to observe correlations between the geometric structure and electrical properties of polycrystalline ZnO surfaces under ultrahigh vacuum. Constant current images revealed crystallographic features at a range of length scales, including facets which are hundreds of nanometers long and monoatomic steps ≅0.5 nm (≅5 Å) in height. Tunneling spectroscopy was used to identify individual ZnO grains, grain boundaries, and surface impurities. Areas of reduced conductivity which extend 5 to 40 nm (50 to 400 Å) on either side of the grain boundaries are attributed to associated space charge regions. This paper demonstrates that, when used together, STM and TS are powerful techniques for the study of the structure and electrical properties of single interfaces and grain boundaries.