Member, American Ceramic Society.
Ferroelectric Thin Films of Bismuth-Containing Layered Perovskites: Part I, Bi4Ti3O12
Article first published online: 20 JAN 2005
Journal of the American Ceramic Society
Volume 81, Issue 12, pages 3253–3259, December 1998
How to Cite
Du, X. and Chen, I.-W. (1998), Ferroelectric Thin Films of Bismuth-Containing Layered Perovskites: Part I, Bi4Ti3O12. Journal of the American Ceramic Society, 81: 3253–3259. doi: 10.1111/j.1151-2916.1998.tb02764.x
B. A. Tuttle—contributing editor
Supported by the National Science Foundation under Grant No. DMR-97-96219. The use of facilities of the Laboratory for Research on the Structure of Matter at the University of Pennsylvania supported by NSF-MRSEC under Grant No. DMR-96-32598 is acknowledged.
- Issue published online: 20 JAN 2005
- Article first published online: 20 JAN 2005
- Manuscript No. 190944. Received June 6, 1997; approved March 16, 1998.
Ferroelectric thin films of bismuth-containing layered perovskite Bi4Ti3O12 have been fabricated by a metalorganic decomposition (MOD) method. Crack-free and crystalline films of ∼5000 Å thickness have been deposited on Pt/Ti/SiO2/Si substrates. Different heat treatments have been studied to investigate the nucleation and growth of perovskite Bi4Ti3O12 crystallites. If the same composition and final annealing temperature are used, films with different orientations are obtained by different heating schedules. These films show a large anisotropy in ferroelectric properties. Theoretical considerations are presented to suggest that nucleation control is responsible for texture and grain-size evolution. Moreover, the origin of the ferroelectric anisotropy is rooted in the two-dimensional nature of layered polarization.