Niobium Doping and Dielectric Anomalies in Bismuth Titanate

Authors

  • Holly S. Shulman,

    1. Laboratoire de Céramique, Ecole Polytechnique Fédéral de Lausanne, CH-1015 Lausanne, Switzerland
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    • *

      Member, American Ceramic Society.

    • Currently with Ceralink, Inc., Pompano Beach, FL 33060.

  • Dragan Damjanovic,

    1. Laboratoire de Céramique, Ecole Polytechnique Fédéral de Lausanne, CH-1015 Lausanne, Switzerland
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  • Nava Setter

    1. Laboratoire de Céramique, Ecole Polytechnique Fédéral de Lausanne, CH-1015 Lausanne, Switzerland
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      Member, American Ceramic Society.


  • C. Randall—contributing editor

  • Supported by the Swiss Commission for the Encouragement of Scientific Research (CERS).

  • Based in part on the thesis submitted by author HSS for the Ph.D. Degree in Material Science from Swiss Federal Institute of Technology, Lausanne, Switzerland, 1997.

Abstract

A study of the complex permittivity in bismuth titanate was conducted to reveal the nature of an anomaly in the real part of the permittivity, which occurs below the Curie temperature. This anomaly is frequency dependent and is caused by a combination of two relaxation phenomena that appear in the imaginary part of the permittivity. One of the relaxations showed classic characteristics of an ion-jump process. Niobium doping suppressed this relaxation and eliminated the nonferroelectric anomaly in permittivity. Niobium is proposed to affect the ion-jump relaxation through a decrease in the concentration and possibly the mobility of oxygen vacancies.

Ancillary