Transmission electron microscopy of solution-processed, intrinsic and Al-doped ZnO nanowires for transparent electrode fabrication


G.J. Kusinski, Chevron Energy Technology Company, 100 Chevron Way, 10-2530 Richmond, CA 94802, U.S.A. Tel: +1 (510) 242 2353; fax: +1 (949) 861 9274; e-mail: gkusinski@chevroncom.


A solution-based chemistry was used to synthesize intrinsic and Al-doped (1% and 5% nominal atomic concentration of Al) ZnO nanostructures. The nanowires were grown at 300°C in trioctylamine by dissolving Zn acetate and Al acetate. Different doping conditions gave rise to different nanoscale morphologies. The effect of a surfactant (oleic acid) was also investigated. An electron microscopy study correlating morphology, aspect ratio and doping of the individual ZnO wires to the electrical properties of the spin coated films is presented. HRTEM revealed single crystalline [0001] wires.