• silicon carbide;
  • nanomaterials;
  • sinter/sintering

Nanostructured β-SiC, with crystallite size in the range of 5–20 nm in agglomerates of 50–150 nm, was formed by reactive high-energy ball milling and consolidated to a relative density of 98% by sintering at 1700°C without the use of additives. X-ray line broadening analysis gave a crystallite size of 25 nm, while transmission electron microscopy observations showed the crystallite size to be in the range of 30–50 nm. Evidence demonstrating the role of a disorder–order transformation in the densification process is provided by changes in the diffraction peak patterns and in the integral width with temperature.