Member, American Ceramic Society.
Consolidation of Nanostructured β-SiC by Spark Plasma Sintering
Article first published online: 7 JUL 2008
Journal of the American Ceramic Society
Volume 87, Issue 8, pages 1436–1441, August 2004
How to Cite
Yamamoto, T., Kitaura, H., Kodera, Y., Ishii, T., Ohyanagi, M. and Munir, Z. A. (2004), Consolidation of Nanostructured β-SiC by Spark Plasma Sintering. Journal of the American Ceramic Society, 87: 1436–1441. doi: 10.1111/j.1551-2916.2004.01436.x
R. Riedel—contributing editor
This work was supported by the 2002 research fund of Ryukoku University for the long-term researcher and was partially supported by a grant based on the High-Tech Research Center Program for Private Universities from the Japan Ministry of Education, Culture, Sport, Science, and Technology to M.O. and by a grant from the Army Research Office (ARO) to Z.A.M.
- Issue published online: 7 JUL 2008
- Article first published online: 7 JUL 2008
- Manuscript No. 10245. Received May 27, 2003; approved January 23, 2004.
- silicon carbide;
Nanostructured β-SiC, with crystallite size in the range of 5–20 nm in agglomerates of 50–150 nm, was formed by reactive high-energy ball milling and consolidated to a relative density of 98% by sintering at 1700°C without the use of additives. X-ray line broadening analysis gave a crystallite size of 25 nm, while transmission electron microscopy observations showed the crystallite size to be in the range of 30–50 nm. Evidence demonstrating the role of a disorder–order transformation in the densification process is provided by changes in the diffraction peak patterns and in the integral width with temperature.