*Member, American Ceramic Society.
Oxidation of Zirconium Diboride–Silicon Carbide at 1500°C at a Low Partial Pressure of Oxygen
Article first published online: 9 AUG 2006
Journal of the American Ceramic Society
Volume 89, Issue 10, pages 3240–3245, October 2006
How to Cite
Rezaie, A., Fahrenholtz, W. G. and Hilmas, G. E. (2006), Oxidation of Zirconium Diboride–Silicon Carbide at 1500°C at a Low Partial Pressure of Oxygen. Journal of the American Ceramic Society, 89: 3240–3245. doi: 10.1111/j.1551-2916.2006.01229.x
N. Jacobson—contributing editor
This material is based upon work supported by the National Science Foundation under grant number DMR–0346800.
- Issue published online: 5 SEP 2006
- Article first published online: 9 AUG 2006
- Manuscript No. 21636. Recevied March 27, 2006; approved June 7, 2006.
The oxidation behavior of zirconium diboride containing 30 vol% silicon carbide particulates was investigated under reducing conditions. A gas mixture of CO and ∼350 ppm CO2 was used to produce an oxygen partial pressure of ∼10−10 Pa at 1500°C. The kinetics of the growth of the reaction layer were examined for reaction times of up to 8 h. Microstructures and chemistries of reaction layers were characterized using scanning electron microscopy and X-ray diffraction analysis. The kinetic measurements, the microstructure analysis, and a thermodynamic model indicate that oxidation in CO–CO2 produced a non-protective oxide surface scale.