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Hot Pressing of Tantalum Carbide With and Without Sintering Additives

Authors

  • Xiaohong Zhang,

    Corresponding author
    1. Department of Material Science and Engineering, University of Missouri-Rolla, Rolla, Missouri 65409
      †Author to whom correspondence should be addressed. e-mail: xiaoh@umr.edu
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    • *Member, American Ceramic Society.

  • Gregory E. Hilmas,

    1. Department of Material Science and Engineering, University of Missouri-Rolla, Rolla, Missouri 65409
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    • *Member, American Ceramic Society.

  • William G. Fahrenholtz,

    1. Department of Material Science and Engineering, University of Missouri-Rolla, Rolla, Missouri 65409
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    • *Member, American Ceramic Society.

  • Douglas M. Deason

    1. U. S. Army Space and Missile Defense Command, Huntsville, Alabama 35807
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  • C.-H. Hsueh—contributing editor

  • This work was supported by the U. S. Army Space and Missile Defense Command under contract DASG60-03-1-0011.

†Author to whom correspondence should be addressed. e-mail: xiaoh@umr.edu

Abstract

Densification of tantalum carbide (TaC) was studied by hot pressing at temperatures ranging from 1900° to 2400°C with and without sintering additives. Without sintering additives, the relative density increased from 75% at 1900°C to 96% at 2400°C. A microstructural examination showed no observable grain growth up to 2300°C. Densification was enhanced with carbon (C) and/or B4C additions. TaC with a 0.78 wt% C addition achieved a relative density of 97% at 2300°C. Additions of 0.36 wt% B4C or 0.43 wt% B4C and 0.13 wt% C increased the relative density to 98% at 2200°C, accompanied by rapid grain growth at 2100°C and higher temperatures.

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