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Synthesis and Microwave Dielectric Properties of Re3Ga5O12 (Re: Nd, Sm, Eu, Dy, Yb, and Y) Ceramics

Authors


  • Y. R. Whang—contributing editor

  • This work was supported by the Ministry of Commerce, Industry, and Energy through the Project of Standardization and two of the authors also acknowledge the financial support provided by the Ministry of Commerce, Industry, and Energy through the LTCC Microwave Dialectrics Project.

†Author to whom correspondence should be addressed. e-mail: snahm@korea.ac.kr

Abstract

Re3Ga5O12 (Re: Nd, Sm, Eu, Dy, Yb, and Y) garnet ceramics were synthesized and their microwave dielectric properties were investigated for advanced substrate materials in microwave integrated circuits. The Re3Ga5O12 ceramics sintered at 1350°–1500°C had a high-quality factor (Q×f) ranging from 40 000 to 192 173 GHz and a low-dielectric constant (ɛr) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (τf) in the range of −33.7 to −12.4 ppm/°C. In particular, the Sm3Ga5O12 ceramics sintered at 1450°C exhibited good microwave dielectric properties of ɛr=12.4, Q×f=192 173 GHz, and τf=−19.2 ppm/°C.

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