A Potential Red-Emitting Phosphor BaGd2(MoO4)4:Eu3+ for Near-UV White LED


  • J. Ballato—contributing editor

  • This work was supported by a grant from the Ph.D. Programs Foundation of Ministry of Education of China (No.20070487076) and National Natural Science Foundation of China (No.50802031). This work is also supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2007-412-J00902) and also this work is partially supported by a grant-in-aid for the National Core Research Center Program from MEST and KOSEF (No. R15-2006-022-03001).

†Author to whom correspondence should be addressed. e-mail: jhjeong@pknu.ac.kr


Red-emitting phosphor BaGd2−xEux(MoO4)4 has been successfully synthesized by a simple sol–gel method. The process of phosphor formation is characterized by thermogravimetric-differential thermal analysis and X-ray diffraction. Field-emission scanning electronic microscopy is used to characterize the size and the shape of the phosphor particles. Photo-luminescent property of the phosphor is also performed at the room temperature. The effects of firing temperature and Eu3+ activator concentration on the photoluminescence (PL) properties are elaborated in detail. PL characterization reveals that the sample with the firing temperature at 800°C and the concentration of Eu3+ at 0.7 shows the most intense emission, and its intensity is about three times stronger than that of phosphor prepared by solid-state method with the same composition and firing temperature. The new red-emitting phosphor shows an intense absorption at 396 nm, which matches well with commercial near-UV light-emitting diode (LED) chips, therefore, it is a good candidate of red phosphor used for near-UV white LEDs.