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High-Energy Density Capacitors Utilizing 0.7 BaTiO3–0.3 BiScO3 Ceramics

Authors

  • Hideki Ogihara,

    Corresponding author
    1. Center for Dielectric Studies, The Pennsylvania State University, University Park, Pennsylvania 16802
      †Author to whom correspondence should be addressed. e-mail: hideki_ogi@hotmail.com
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  • Clive A. Randall,

    1. Center for Dielectric Studies, The Pennsylvania State University, University Park, Pennsylvania 16802
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  • Susan Trolier-McKinstry

    1. Center for Dielectric Studies, The Pennsylvania State University, University Park, Pennsylvania 16802
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  • P. K. Davies—contributing editor

  • This work was supported by the Center for Dielectric Studies and was performed in part at the Penn State Keck Smart Materials Integration Laboratory, which is affiliated with the Penn State node of the National Nanotechnology Infrastructure Network.

†Author to whom correspondence should be addressed. e-mail: hideki_ogi@hotmail.com

Abstract

A high, temperature-stable dielectric constant (∼1000 from 0° to 300°C) coupled with a high electrical resistivity (∼1012Ω·cm at 250°C) make 0.7 BaTiO3–0.3 BiScO3 ceramics an attractive candidate for high-energy density capacitors operating at elevated temperatures. Single dielectric layer capacitors were prepared to confirm the feasibility of BaTiO3–BiScO3 for this application. It was found that an energy density of about 6.1 J/cm3 at a field of 73 kV/mm could be achieved at room temperature, which is superior to typical commercial X7R capacitors. Moreover, the high-energy density values were retained to 300°C. This suggests that BaTiO3–BiScO3 ceramics have some advantages compared with conventional capacitor materials for high-temperature energy storage, and with further improvements in microstructure and composition, could provide realistic solutions for power electronic capacitors.

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