Broadband Near-IR Emission in Tm/Er-Codoped GeS2–In2S3-Based Chalcohalide Glasses

Authors

  • Yinsheng Xu,

    1. Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
    Search for more papers by this author
  • Qiang Zhang,

    1. Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
    2. Graduate School of the Chinese Academy of Sciences, Beijing 100039, China
    Search for more papers by this author
  • Ce Shen,

    1. Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
    Search for more papers by this author
  • Danping Chen,

    1. Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
    Search for more papers by this author
  • Huidan Zeng,

    1. Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
    Search for more papers by this author
  • Guorong Chen

    Corresponding author
    1. Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
      †Author to whom correspondence should be addressed. e-mail: grchen@ecust.edu.cn
    Search for more papers by this author

  • A. Bruce—contributing editor

  • This work is financially supported by the National Natural Science Foundation of China (NSFC 60578042, 50702021), and Research Funds for Young Teachers for the Doctoral Program by Ministry of Education of China (20070251013) and Shanghai Leading Academic Discipline Project, Project Number B502.

†Author to whom correspondence should be addressed. e-mail: grchen@ecust.edu.cn

Abstract

The near IR emission spectra of Tm/Er-codoped GeS2–In2S3-based chalcohalide glasses are studied with an 808 nm laser as excitation source. A broad emission with a full-width at half-maximum of ∼170 nm is recorded in a 0.5Tm2S3–0.1Er2S3-codoped 70GeS2–20In2S3–10CsBr (in mol%) glass. The luminescence mechanisms are discussed with different CsI concentration, different halogen atoms, and different In content. These results suggest that both halogen (X) atoms and [InSxX4−x] structural units can enhance the emission intensity located at 1460 nm.

Ancillary