W. Mullins—contributing editor
Spin-Coating-Derived Gold-Nanoparticle Memory
Article first published online: 28 MAY 2010
© 2010 The American Ceramic Society
Journal of the American Ceramic Society
Volume 93, Issue 10, pages 3142–3147, October 2010
How to Cite
Leu, C.-C., Chen, S.-T. and Liu, F.-K. (2010), Spin-Coating-Derived Gold-Nanoparticle Memory. Journal of the American Ceramic Society, 93: 3142–3147. doi: 10.1111/j.1551-2916.2010.03858.x
This study was supported by the National Science Council, Republic of China, through contract no. NSC 98-2221-E-390-014.
- Issue published online: 28 MAY 2010
- Article first published online: 28 MAY 2010
- Manuscript No. 27058. Received November 11, 2009; approved April 14, 2010.
A metal–oxide–semiconductor (MOS) capacitor embedded with gold nanoparticles (Au NPs) has been successfully fabricated by a spin-coating-derived chemical solution process. The colloidal synthesized Au NPs (∼3.5 nm) were self-assembled to 3-aminopropyltrimethoxysilane-modified silicon oxide substrates. With the spin-coating process, Au NPs can be fabricated onto silicon oxide with a high packing density of 1.6 × 1012 cm−2 in a short processing time. The sol–gel-derived HfO2 layer, acting as a control oxide, was also spin coated to construct an Si/SiO2/Au NPs/HfO2 structure. This MOS structure showed good memory effect and retention properties. This study indicates that it is appropriate to utilize the spin-coating process in nanocrystal memory applications.