Ultra-Low-Fire Te2(Mo1−xWx)O7 Ceramics: Microstructure and Microwave Dielectric Properties

Authors

  • Sea-Fue Wang,

    Corresponding author
    1. Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan, ROC
    Search for more papers by this author
    • Present address: Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, ROC.

  • Yuh-Ruey Wang,

    1. Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan, ROC
    Search for more papers by this author
  • Yung-Fu Hsu,

    1. Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan, ROC
    Search for more papers by this author
  • Hsi-Chuan Lu,

    1. Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan, ROC
    Search for more papers by this author
  • Jung-Shiung Tsai

    1. Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan, ROC
    Search for more papers by this author

  • N. Alford—contributing editor

†Author to whom correspondence should be addressed. e-mail: sfwang@ntut.edu.tw

Abstract

The sintering temperatures of common microwave dielectric ceramics fall in the range between 1200° and 1500°C. In this study, prepared new microwave dielectric ceramics of Te2(Mo1−xWx)O7 showed a sintering temperature of 520°C. Only monoclinic (P21/c) Te2(Mo1−xWx)O7 phase was found in the X-ray diffraction patterns after sintering, an observation further confirmed by high-resolution transmission electron microscopy results. Microstructures were composed of angular grains in the sizes of 2–5 μm. The microwave dielectric properties of pure Te2MoO7 and Te2(Mo0.95W0.05)O7 ceramics sintered at 520°C can be summarized as ɛr≈13.6, Q×f≈46 900 GHz, and τf≈−36.0 ppm/°C and ɛr≈13.9, Q×f≈25 820 GHz, and τf≈−12.8 ppm/°C.

Ancillary