Enhanced Lateral Growth of Zinc Oxide Nanowires on Sensor Chips

Authors

  • K. C. Chiang,

    1. Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, Tainan 70101, Taiwan
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  • Wan-Yu Wu,

    1. Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
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  • Jyh-Ming Ting

    Corresponding author
    1. Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, Tainan 70101, Taiwan
    2. Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
      †Author to whom correspondence should be addressed. e-mail: jting@mail.ncku.edu.tw
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  • G. Rohrer—contributing editor

  • This work was financially supported by the National Science Council in Taiwan under Grant No. NSC 98-2622-E-006-012-CC2 and the Top University Program at the National Cheng Kung University under Grant No. R048/D97-3360.

†Author to whom correspondence should be addressed. e-mail: jting@mail.ncku.edu.tw

Abstract

We have adapted a simple concept analogous to substrate tilting used in common chemical vapor deposition processes to enhance the lateral growth of zinc oxide nanowires for bridging two adjacent electrodes in sensor chips. The chips were placed at elevated positions to avoid reactant depletion due to the existence of a diffusion boundary layer atop the horizontal substrate support. We show that the nanowire bridging is much improved and better than that reported in the literatures. As a result, the sensor chip sensitivity is also enhanced as compared with the previously reported data.

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