D. Damjanovic—contributing editor
Effect of PbO Seeding Layers on the Structure and Properties of the Sol–Gel-Derived BiScO3–PbTiO3 Thin Films
Article first published online: 2 NOV 2010
© 2010 The American Ceramic Society
Journal of the American Ceramic Society
Volume 93, Issue 12, pages 3993–3996, December 2010
How to Cite
Zhong, C., Wang, X., Wu, Y. and Li, L. (2010), Effect of PbO Seeding Layers on the Structure and Properties of the Sol–Gel-Derived BiScO3–PbTiO3 Thin Films. Journal of the American Ceramic Society, 93: 3993–3996. doi: 10.1111/j.1551-2916.2010.04180.x
This work was the supported by National Science fund for distinguished young scholars (Grant No. 50625204), Science Fund for Creative Research Groups (Grant No.50921061), and by the Ministry of Sciences and Technology of China through 973-project under Grant 2009CB623301, also by outstanding tutors for doctoral dissertations of S&T project in Beijing (No. YB20081000302).
- Issue published online: 1 DEC 2010
- Article first published online: 2 NOV 2010
- Manuscript No. 27674. Received March 13, 2010; approved September 15, 2010.
Structure and dielectric/piezoelectric properties of the sol–gel-derived 0.36BiScO3–0.64PbTiO3 (BSPT) thin films deposited on Pt(111)/Ti/SiO2/Si(100) substrates with PbO seeding layers are investigated. Highly (100)-oriented BSPT thin films with thickness ranging from 250 to 950 nm were synthesized by alternatively coating PbO seeding layers and BSPT layers. The as-deposited BSPT film with thickness of 950 nm showed high dielectric constant of 1850 and effective piezoelectric coefficient d33* of approximate 150 pm/V, the latter was comparable with that of the (001) epitaxial BSPT films grown on Nb–SrTiO3 single crystal substrates. The influence of PbO seeds on the structure and electric properties of the films is discussed as well.