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Ultra-Low-Temperature Sintering of Nanostructured β-SiC


  • F. Wakai—contributing editor

†Author to whom correspondence should be addressed. e-mail:


A nanostructured SiC was successfully obtained through the decomposition of Al4SiC4 additive during spark plasma sintering at the lowest temperature so far published under the pressing condition of below 121 MPa. The specimen had a relative density of 95% after sintering at 1450°C, and nearly full densification with a grain size of around 70 nm was achieved at 1500°C. Heavy Al segregation occurred at the grain boundaries, which caused the low-temperature sintering most presumably by promoting grain-boundary diffusion.